SAMSUNG FOUNDRY
| 4nm | 5nm | 8nm | 14nm | 28nm (FD-SOI) | ||
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| INT PLL | 1.2 GHz |  |
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| 2 GHz | |
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| 2.5 GHz | |
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| 3.2 GHz | |
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| 4.5 GHz | |
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| 6.6 GHz | |
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| Fractional -N PLL | 1.2 GHz | |
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| 2.5 GHz | |
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| 3.2 GHz | |
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| 4.5 GHz | |
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| 6.6 GHz | |
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| 8.5 GHz | |
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| OSC | 240k | |
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| 1MH | |
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| 49.152MHz | ||||||
| 200MHz | |
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| 300MHz to 700MHz | |
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| 400MHz | |
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| ADC | 12 bit, 1.0 MSPS | |
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| 12 bit, 1.25 MSPS | |
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| Temp. Sensor | -40 to 125°C, Resolution: 0.0625°C | |
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| -40 to 125°C, Resolution: 0.5°C | |
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| -40 to 125°C, Resolution: 1°C | |
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| PVT Sensor |
Process, Voltage and Temperature sensor. RVT (Regular Vt ) / LVT (Low Vt) process sensor type, 0 to 1.3V, -40 to 125°C, Resolution: 0.0625°C |
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| ABBG | Adaptive Body Bias Generator | |